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FMM5063X
Ku-Band Power Amplifier MMIC
FEATURES *High Output Power; P1dB = 32.0 dBm (Typ.) *High Linear Gain; GL = 30 dB(Typ) *Wide Frequency Band : 12.75 - 15.4 GHz *Impedance Matched Zin/Zout = 50 DESCRIPTION The FMM5063X is a power amplifier MMIC that contains a three stage amplifier, internally matched, for standard communications band in 12.75 to 15.4GHz frequency range. This product is well suited for point-to-point radio and V-SAT. Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXMUM RATING (Ambient Temperature Ta=25 ) Item Stmbol Condition Drain-Source Voltage VDD Gate-Source Voltage VGG Input Power Pin Strage Temperature Tstg RECOMMENDED OPERATING CONDITION Item Symbol Drain-Source Voltage VDD Input Power Pin Operating Backside Temperature Top This product should be hermetically packaged.
Device photo
Rating 10 -3 24 -55 to +125
Unit V V dBm
Condition
Recommended 8 9 -40 to +85
Unit V dBm
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25 ) Item Symbol Test Conditions Limits Unit Min. Typ. Max. 12.75 15.4 GHz 30.0 32.0 dBm 25 29 dB 22 % -32 -37 dBc 1000 1500 mA -8 dB -12 dB G.C.P. : Gain Compression Point S.C.L. : Single Carrier Level ~ 199V
Frequency Range f VDD=6.0V Output Power at 1dB G.C.P. P1dB IDD(DC)=900mA typ. Power Gain at 1dB G.C.P. G1dB Zs=Zl=50ohm Power Added Efficiency at 1dB G.C.P. Nadd *df=10MHz,Po=20dBm Third Order Intermodulation IM3* (S.C.L.) Drain Current at 1dB G.C.P. Iddrf Input Return Loss at Pin=-20dBm RLin Output Return Loss at Pin=-20dBm RLout Note : RF parameter sample size 10ps. Criteria (accept/reject)=(0/1)
ESD
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kW)
Class 0
Edition 1.1 January 2006
1
http://www.eudyna.com/
FMM5063X
Ku-Band Power Amplifier MMIC
Output Power vs. Frequency
VDD=6V, IDD(DC)=900mA
34
Pin=+4dBm
Output Power, Drain Current vs. Input Power
VDD=6V, IDD(DC)=900mA
34
P1dB
1500
32 Output Power [dBm] 30 28
32 Output Power [dBm] 30 28 26 24 22 20
12.75GHz 14.0GHz 15.4GHz
1400 Drain Current [mA] 1300 1200 1100 1000 900 800 700
Pin=-0dBm
Pin=-4dBm
26 24
Pin=-8dBm
22 20 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 Frequency [GHz]
18 -12 -10 -8 -6 -4 -2 0 2 4 6 8 Input Power [dBm]
Power Added Efficiency vs. Frequency
VDD=6V, IDD(DC)=900mA
35 30 25 20 15 10 5 0 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 Frequency [GHz]
Pin=-4dBm Pin=+4dBm P1dB Pin=-0dBm
Power Added Efficiency [%]
Pin=-8dBm
2
FMM5063X
Ku-Band Power Amplifier MMIC
IMD vs. Frequency
VDD=6V, IDD(DC)=900mA, Pout=20dBm S.C.L.
IMD vs. Output Power
VDD=6V, IDD(DC)=900mA
-30 Intermodulation Distortion [dBc] -35 IM3 -40 -45 -50 IM5 -55 -60 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 Frequency [GHz]
-10 Intermodulation Distortion [dBc] -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 17 19 21 23 25 27 29 31 33 2-tone Total Output Power [dBm] IM5 IM3 12.75GHz 14.0GHz 15.4GHz
3
FMM5063X
Ku-Band Power Amplifier MMIC
Output Power, Drain Current vs. Input Power by Drain Voltage
IDD(DC)=900mA, f=12.75GHz
36 34 Output Power [dBm] 32 30 28 26 24 22 20 18 -12 -10 -8 -6 -4 -2 0 2 4 6 8 Input Power [dBm] 4V 5V 6V 7V 8V 2300 2100 1900
Output Power [dBm] 36 34 32 4V 5V 6V 7V 8V
Output Power, Drain Current vs. Input Power by Drain Voltage
IDD(DC)=900mA, f=14.0GHz
2300 2100 1900 1700 1500 1300 1100 900 700 500 -12 -10 -8 -6 -4 -2 0 2 4 6 8 Input Power [dBm] Drain Current [mA]
Drain Current [mA]
1700 1500 1300 1100 900 700 500
30 28 26 24 22 20 18
Output Power, Drain Current vs. Input Power by Drain Voltage
IDD(DC)=900mA, f=15.4GHz
Output Power, Gain vs. Drain Voltage
IDD(DC)=900mA, f=15.4GHz
36 34 32 Output Power [dBm] 30 28 26 24 22 20 18 -12 -10 -8 -6 -4 -2 0 2 4 6 8 Input Power [dBm] 4V 5V 6V 7V 8V
2300 2100 1900
P1dB [dBm]
36 35 34 12.75GHz 14.0GHz 15.4GHz
38 37 36 35 G1dB [dB] 34 33 32 31 30 29 28 27 3 4 5 6 7 8 9 Drain Voltage [V]
1700 1500 1300 1100 900 700 500
Drain Current [mA]
33 32 31 30 29 28 27 26 25
4
FMM5063X
Ku-Band Power Amplifier MMIC
Output Power, Drain Current vs. INPUT POWER by Drain Current
VDD=6V, f=12.75GHz
Output Power, Drain Current vs. INPUT POWER by Drain Current
VDD=6V, f=14.0GHz 2100 1900
34 32 Output Power [dBm] 30 28 26 24 22 20 18 -12 -10
34 32 Output Power [dBm] 30 28 26 24 22 20 18
700mA 900mA 1100mA
700mA 900mA 1100mA
2100 1900 Drain Current [mA]
G1dB [dB]
Drain Current [mA]
1700 1500 1300 1100 900 700 500 -8 -6 -4 -2 0 2 4 6 8 Input Power [dBm]
1700 1500 1300 1100 900 700 500 -12 -10 -8 -6 -4 -2 0 2 4 6 8 Input Power [dBm]
Output Power, Drain Current vs. INPUT POWER by Drain Current
VDD=6V, f=15.4GHz
34 32 Output Power [dBm] 30 28 26 24 22 20 18 -12 -10 -8 -6 -4 -2 0 2 4 6 8 Input Power [dBm] 700mA 900mA 1100mA 2100 1900 Drain Current [mA] 1700 1500 1300 1100 900 700 500 35 34 33 32 P1dB [dBm] 31 30 29 28 27 26 25
Output Power, Gain vs. Drain Current
VDD=6V 12.75GHz 14.0GHz 15.4GHz 36 35 34 33 32 31 30 29 28 27 26 600 700 800 900 1000 Drain Current [mA] 1100 1200
5
FMM5063X
Ku-Band Power Amplifier MMIC
IMD vs. OUTPUT POWER by Drain Voltage
IDD(DC)=900mA, f=12.75GHz
-10
IMD vs. OUTPUT POWER by Drain Voltage
IDD(DC)=900mA, f=14.0GHz
-10 Intermodulation Distortion [dBc]
4V 5V 6V 7V 8V
Intermodulation Distortion [dBc]
-15 -20 -25 -30 -35 -40 -45 -50 -55 -60 17 19
-15 -20 -25 -30 -35 -40 -45 -50 -55 -60 17 19
4V 5V 6V 7V 8V
IM3
IM3
IM5
IM5
21
23
25
27
29
31
33
21
23
25
27
29
31
33
Input Power [dBm]
Input Power [dBm]
IMD vs. OUTPUT POWER by Drain Voltage
IDD(DC)=900mA, f=15.4GHz
-10 Intermodulation Distortion [dBc] -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 17 19 21 23 25 27 29 31 33 Input Power [dBm] IM5 IM3 4V 5V 6V 7V 8V
6
FMM5063X
Ku-Band Power Amplifier MMIC
IMD vs. OUTPUT POWER by Drain Current
VDD=6V, f=12.75GHz
-10
IMD vs. OUTPUT POWER by Drain Current
VDD=6V, f=14.0GHz
-10 Intermodulation Distortion [dBc]
700mA 900mA 1100mA
Intermodulation Distortion [dBc]
-15 -20 -25 -30 -35 -40 -45 -50 -55 -60 17 19
-15 -20 -25 -30 -35 -40 -45 -50 -55 -60 17 19
700mA 900mA 1100mA
IM3
IM3
IM5
IM5
21
23
25
27
29
31
33
21
23
25
27
29
31
33
2-tone Total Output Power [dBm]
2-tone Total Output Power [dBm]
IMD vs. OUTPUT POWER by Drain Current
VDD=6V, f=15.4GHz
-10 Intermodulation Distortion [dBc] -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 17
700mA 900mA 1100mA
IM3
IM5
19
21
23
25
27
29
31
33
2-tone Total Output Power [dBm]
7
FMM5063X
Ku-Band Power Amplifier MMIC
S-PARAMETER
+50j +25j
10 25
+90 +100j
+10j
14GHz
16GHz 12GHz
+250j
14Hz 12GHz
0
12GHz
14GHz
180 40
20 Scale for |S21| Scale for |S 12|
0
-10j
16GHz
-250j
16Hz
-25j -50j
-100j
S11 S22
0.1 -90
S12 S21
8
FMM5063X
S-PARAMETER VDD=6V, IDD=900mA
Frequency [GHz] 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 12.2 12.4 12.6 12.8 13.0 13.2 13.4 13.6 13.8 14.0 14.2 14.4 14.6 14.8 15.0 15.2 15.4 15.6 15.8 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 S11 MAG 0.58 0.57 0.59 0.62 0.66 0.69 0.73 0.75 0.76 0.78 0.80 0.80 0.80 0.79 0.79 0.78 0.76 0.74 0.72 0.68 0.64 0.59 0.53 0.46 0.38 0.30 0.23 0.21 0.24 0.31 0.37 0.43 0.55 0.65 0.74 0.79 0.84 0.86 0.87 0.88 0.88 0.89 0.90 0.90 0.91 0.92 0.92 0.92 0.92 0.91 0.90 0.87 0.85 0.79 0.74 0.67 ANG -29.2 -42.7 -57.2 -70.5 -82.8 -94.0 -105.0 -115.4 -123.8 -132.7 -143.0 -155.5 -158.6 -162.0 -165.8 -170.0 -174.6 -179.7 174.6 168.4 161.2 152.9 143.3 131.7 117.3 97.7 69.1 30.6 -6.8 -33.5 -52.3 -66.5 -97.6 -107.2 -116.4 -123.6 -130.0 -136.1 -140.9 -144.6 -148.2 -150.9 -154.0 -156.6 -159.7 -161.9 -164.8 -167.9 -170.8 -174.1 -177.1 179.5 175.7 172.2 170.8 168.9 S21 ANG MAG 0.01 132.2 0.07 -14.0 0.08 -163.4 0.05 169.5 0.10 -157.9 0.57 137.7 1.59 65.8 3.64 -29.5 5.00 -119.1 6.54 164.2 9.79 91.3 16.72 6.4 18.43 -13.0 20.09 -33.1 21.57 -53.6 22.85 -74.3 23.90 -94.9 24.82 -115.5 25.64 -135.8 26.41 -156.0 27.17 -176.3 28.00 163.3 28.82 142.7 29.71 121.5 30.51 99.9 31.16 77.6 31.60 54.7 31.80 31.2 31.64 7.2 31.10 -17.5 30.12 -43.0 28.53 -69.0 14.50 164.0 5.42 61.8 2.25 -25.6 1.07 -127.3 0.20 117.7 0.03 56.9 0.00 94.4 0.00 80.0 0.00 69.8 0.00 62.1 0.00 17.8 0.00 3.2 0.00 31.5 0.00 131.7 0.00 8.4 0.00 145.0 0.00 49.5 0.00 39.1 0.00 16.1 0.00 -25.3 0.00 -12.7 0.00 -142.6 0.00 -43.0 0.00 -96.1 S12 MAG ANG 0.00 -148.2 0.00 -95.8 0.00 -152.7 0.00 36.6 0.00 -99.4 0.00 145.6 0.00 128.2 0.00 10.3 0.00 -67.9 0.00 -104.4 0.00 -175.6 0.00 137.7 0.00 103.1 0.00 127.8 0.00 92.8 0.00 88.2 0.00 108.5 0.00 56.1 0.00 27.2 0.00 49.2 0.00 15.6 0.00 3.1 0.00 -17.6 0.00 -52.1 0.00 -34.7 0.00 -115.4 0.00 -136.6 0.00 145.0 0.00 166.5 0.00 153.5 0.00 123.9 0.00 104.3 0.00 -19.5 0.00 -98.3 0.00 152.2 0.00 165.1 0.00 -176.2 0.00 91.7 0.00 98.7 0.00 65.9 0.00 66.2 0.00 27.9 0.00 41.2 0.00 -16.8 0.00 -14.0 0.00 27.1 0.00 147.7 0.00 15.4 0.00 14.4 0.00 -25.8 0.00 118.9 0.00 -53.4 0.00 -61.3 0.00 -56.1 0.01 -99.2 0.00 -9.9 S22 MAG ANG 1.00 -30.2 0.97 -60.9 0.96 -88.1 0.96 -119.3 0.92 -153.1 0.83 170.2 0.71 123.2 0.49 49.6 0.43 -67.8 0.53 -158.1 0.51 134.5 0.34 49.2 0.30 26.6 0.28 0.7 0.26 -26.6 0.25 -51.8 0.25 -74.3 0.26 -94.7 0.26 -110.7 0.27 -123.0 0.27 -133.8 0.28 -141.7 0.29 -147.8 0.30 -155.0 0.31 -162.1 0.33 -168.4 0.35 -177.7 0.36 172.0 0.38 161.4 0.38 147.0 0.37 130.0 0.34 111.6 0.29 -34.6 0.51 -112.7 0.71 -150.9 0.82 -177.6 0.87 159.5 0.92 140.5 0.94 124.6 0.93 108.6 0.93 91.3 0.93 73.6 0.87 50.3 0.77 14.1 0.63 -44.3 0.60 -132.2 0.79 169.8 0.86 136.0 0.92 113.1 0.96 99.9 0.95 88.2 0.94 75.7 0.96 68.3 0.98 62.8 0.94 53.3 0.97 44.9
Ku-Band Power Amplifier MMIC
9
FMM5063X
Ku-Band Power Amplifier MMIC
Tch vs. Drain Voltage (Reference)
80 70 60 Tch [ ] 50 40 30 20 10 0 4 5 6 VDD [V] 7 8 9
IDD(DC)=900mA
MTTF vs. Tch
1.E+12 1.E+11 1.E+10 1.E+09 MTTF (hrs) 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 1.E+03 1.E+02 1.E+01 50 100 150 Tch (deg-C) 200 250 Ea=1.56eV
10
FMM5063X
Ku-Band Power Amplifier MMIC
Chip Outline and Bonding Pad Locations (Dimension in Micro-Meters) VGG1 0 120 335 2770 2550 VDD1 905 VDD3 1350 VDD5 2845 3315 3435 2770 2575
RF-IN 1385
1385 RF-OUT
150 0 0 120 335 (VGG2) 905 1350 VDD2 VDD4 2845 3315 3435 VDD6
125 0
Chip Size : 343530um x 277030um Chip Thickness : 6020um Bonding Pad Size : 160um x 80um
: Gate voltage is required from either or both bonding pad( VGG1 or/and VGG2).
11
FMM5063X
Ku-Band Power Amplifier MMIC
Assembly Diagrams Recommended assembly
1 uF VGG
100pF
100pF
100pF
100pF
1 uF VDD
50ohm Line
50ohm Line
100pF
100pF
100pF
VDD 1 uF
"Copper" is the recommended material for the package or carrier.
12
FMM5063X
Ku-Band Power Amplifier MMIC
DIE ATTACH 1) The die-attach station must have accurate temperature control, and an inert forming gas should be used. 2) Chips should be kept at room temperature except during die-attach. 3) Place package or carrier on the heated stage. 4) Lightly grasp the chip edges by the longer side using tweezers. Die attach conditions Stage Temperature : 300 to 310 deg.C Time : less than 15 seconds AuSn Preform Volume : per next Figure
2500 Volume of Au-Sn Perform (10 -3/mm 3)
2000
FMM5063X
1500
1000
500
0 0 2 4 6 8 10 12 14 16 18 20 Area of Chip Bach Surface (mm^2)
WIRE BONDING The bonding equipment must be properly grounded. The following or equivalent equipment, tools, materials, and conditions are recommended. 1) Bonding Equipment and Bonding Tool. Bonding Equipment : West Bond Model 7400 (Manual Bonder) Bonding Tool : CCOD-1/16-S-437-60-F-2010-MP (Deweyl) 2) Bonding Wire Material : Hard or Half hard gold Diameter : 0.7 to 1.0 mil 3) Bonding Conditions Method : Thermal Compression Bonding with Ultrasonic Power Tool Force : 0.196 N 0.0196 N Stage Temperature : 215 deg.C 5 deg.C Tool Heater : None Ultrasonic Power Transmitter : West Bond Model 1400 Duration : 150 mS/Bond
13
FMM5063X
Ku-Band Power Amplifier MMIC
For further information please contact :
Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: +1 408 232-9500 FAX: +1 408 428-9111 Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices International Srl Via Teglio 8/2 - 20158 Milano, Italy TEL: +39-02-8738-1695 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Suite 1906B, Tower 6, China Hong Kong City 33 Canton Road, Tsimshatsui, Kowloon Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL +81-45-853-8156 FAX +81-45-853-8170
CAUTION
Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others.
(c) 2006 Eudyna Devices Inc.
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